This report studies the global SiC Substrates market status and forecast, categorizes the global SiC Substrates market size (value & volume) by manufacturers, type, application, and region. This report focuses on the top manufacturers in North America, Europe, China, Japan, South Korea, India and other regions (Southeast Asia, Central & South America, and Middle East & Africa)
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Currently, the global SiC wafer market is expensive, but still in short supply, high raw material costs 40 percent more than the price of silicon carbide semiconductor device, silicon carbide wafer price has become the bottleneck of the third-generation semiconductor industry. Thus, using the most advanced SiC crystal growth technology to achieve large-scale production, reduce production costs of silicon carbide wafers, will promote the rapid development of the third generation of the semiconductor industry, expanding market demand.
With SiC crystal growth and device fabrication technology to further improve the technology. The next few years a variety of SiC power electronic devices will get greater improvements in yield, reliability and price. To enter the stage of full promotion applications. This is likely to lead to a new power electronics technology revolution. Thus, the birth and development of SiC power electronic devices is a revolutionary progress in power electronics technology
The main application areas of silicon carbide wafers with LED solid-state lighting and high-frequency devices, the future of mobile phones and laptop backlight market will provide tremendous growth in demand for silicon carbide
The global SiC Substrates market is valued at 170 million US$ in 2017 and will reach 510 million US$ by the end of 2025, growing at a CAGR of 17.2% during 2018-2025.
The major manufacturers covered in this report
Cree (Wolfspeed)
ROHM (sicrystal)
II‐VI Advanced Materials
Dow Corning
NSSMC
SICC Materials Co., Ltd
TankeBlue Semiconductor
Norstel
Geographically, this report studies the top producers and consumers, focuses on product capacity, production, value, consumption, market share and growth opportunity in these key regions, covering
North America
Europe
China
Japan
Southeast Asia
India
We can also provide the customized separate regional or country-level reports, for the following regions:
North America
United States
Canada
Mexico
Asia-Pacific
China
India
Japan
South Korea
Australia
Indonesia
Singapore
Rest of Asia-Pacific
Europe
Germany
France
UK
Italy
Spain
Russia
Rest of Europe
Central & South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Saudi Arabia
Turkey
Rest of Middle East & Africa
The study objectives of this report are:
To analyze and study the global SiC Substrates capacity, production, value, consumption, status (2013-2017) and forecast (2018-2025);
Focuses on the key SiC Substrates manufacturers, to study the capacity, production, value, market share and development plans in future.
Focuses on the global key manufacturers, to define, describe and analyze the market competition landscape, SWOT analysis.
To define, describe and forecast the market by type, application and region.
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends and factors driving or inhibiting the market growth.
To analyze the opportunities in the market for stakeholders by identifying the high growth segments.
To strategically analyze each submarket with respect to individual growth trend and their contribution to the market
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
To strategically profile the key players and comprehensively analyze their growth strategies.
Table of Contents
1 SiC Substrates Market Overview
2 Global SiC Substrates Market Competition by Manufacturers
3 Global SiC Substrates Capacity, Production, Revenue (Value) by Region (2013-2018)
4 Global SiC Substrates Supply (Production), Consumption, Export, Import by Region (2013-2018)
5 Global SiC Substrates Production, Revenue (Value), Price Trend by Type
6 Global SiC Substrates Market Analysis by Application
7 Global SiC Substrates Manufacturers Profiles/Analysis
8 SiC Substrates Manufacturing Cost Analysis
9 Industrial Chain, Sourcing Strategy and Downstream Buyers
10 Marketing Strategy Analysis, Distributors/Traders
11 Market Effect Factors Analysis
12 Global SiC Substrates Market Forecast (2018-2025)
13 Research Findings and Conclusion
14 Appendix
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